Part Number : RJP30H2DPK-M0
Function : Silicon N Channel IGBT High speed power switching
Manufacturer : Renesas Electronics
Pinout :
Description
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES= 1 A max
Datasheet PDF Download
Other datasheets in the file :
RJP30H2DPK,RJP30H2DPK-M0,RJP30H2DPK-M0-T2