RJP30H2DPK-M0 PDF Datasheet
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Description
This is N-Channel Power MOSFET / Transistor. Preliminary Datasheet
RJP30H2DPK-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25 C
(Ta = 25°C)
Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 250 60 2.08 150 55 to +150 Unit V V A A W °C, W °C °C
R07DS0467EJ0200 Rev.2.00 Jun 15, 2011
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Datasheet pdf - .