Part Number : RJP30E2DPK-M0
Function :Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ
Manufacturer : Renesas Electronics
Pinout : 
Description
* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
* High speed switching tf = 150 ns typ
* Low leak current ICES= 1 μA max
Datasheet PDF Download
Other datasheets in the file : RJP30E2DPK-M0,RJP30E2DPK-M0-T0