RJP30E2DPK-M0 PDF Datasheet


Please enter the part number you wish to PDF download in the search bar.


scroll

Description

This is N-Channel Power MOSFET / Transistor. Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C (Ta = 25°C) Symbol VCES VGES Ic ic(peak) Note1 PC Note2 θj-c Tj Tstg Ratings 360 ±30 35 200 50 2.5 150 55 to +150 Unit V V A A W °C, W °C °C R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Page 1 of 6 RJP30E2DPK.