Part Number : UPD5702TU
Function :3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
Manufacturer : California Eastern Laboratories.
Pinout : 
Description
The µPD5702TU is a silicon laterallydiffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.
FEATURES
* Output Power : Pout=+21 dBm MIN. @Pin= −5 dBm, f =1.9 GHz, VDS=3.0 V
: Pout=+21 dBm MIN. @Pin= +2 dBm, f = 2.45 GHz, VDS=3.0 V
* Single Supplyvoltage : VDS= 3.0 V TYP.
* Packaged in 8-pin Lead-Less Minimold (2.0 x2.2 x 0.5mm) suitable for high-densitysurface mounting.
Datasheet PDF Download
Other datasheets in the file : UPD5702TU