Part Number : RJP63K2DPP-M0
Function : Silicon N Channel IGBT High Speed Power Switching
Manufacturer : Renesas Electronics
Pinout :
Description
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
* High speed switching: tr= 60 ns typ, tf= 200 ns typ.
* Low leak current: ICES= 1 A max
* Isolated package TO-220FL
Datasheet PDF Download
Other datasheets in the file :
RJP63K2,RJP63K2DPP-M0