Part Number : RJP63K2DPK-M0
Function :N-Channel IGBT
Manufacturer : Renesas Electronics
Pinout : 
Description
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
* High speed switching: tr= 60 ns typ, tf= 200 ns typ.
* Low leak current: ICES= 1 A max
Datasheet PDF Download
Other datasheets in the file : RJP63K2DPK, RJP63K2DPK-M0