RJP63K2DPK-M0 PDF Datasheet


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Description

This is N-Channel IGBT. Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25 C (Ta = 25°C) Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 630 ±30 35 200 60 2.08 150 55 to +150 Unit V V A A W °C, W °C °C R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Page 1 of 6 Datasheet pdf - .