Part Number : RJP30H1DPP-M0
Function : Silicon N Channel IGBT High speed power switching
Manufacturer : Renesas Electronics
Pinout :
Description
* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr =80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
* Low leak current: ICES= 1 A max.
* Isolated package TO-220FL
Datasheet PDF Download
Other datasheets in the file :
RJP30H1,RJP30H1DPP-M0