Part Number : RJP30H1DPD
Function : N-Channel Power MOSFET / TO-263
Manufacturer : Renesas Electronics
Pinout :
Description
* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr = 80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
* Low leak current: ICES= 1 A max.
Datasheet PDF Download
Other datasheets in the file :
RJP30H1DPD