RJP30H1DPD PDF Datasheet
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Description
This is N-Channel Power MOSFET / Transistor. Preliminary Datasheet
RJP30H1DPD
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252)
4
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
C
G
12
3
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25 C
Symbol VCES VGES IC ic(peak) Note1 PC Note2 j-c Tj Tstg
Ratings 360 ±30 30 200 40 3.13 150 55 to +150
Unit V V A A W °C, W °C °C
R07DS0465EJ0200 Rev.2.00 Jun 15, 2011
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Datasheet pdf - h.