Part Number : RJH60F5DPQ
Function :Silicon N Channel IGBT High Speed Power Switching
Manufacturer : Renesas Electronics
Pinout : 
Description
600V / 40A / IGBT
* Low collector to emitter saturation voltage
VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching tr= 85 ns typ.
(at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Datasheet PDF Download
Other datasheets in the file : RJH60F5,RJH60F5DPQ,RJH60F5DPQ-A0