Part Number : RJH30H1DPP-M0-T2
Function : Silicon N Channel IGBT High speed power switching
Manufacturer : Renesas Electronics
Pinout :
Description
* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr =80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
* Low leak current: ICES= 1 A max.
* Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.
* Isolated package: TO-220FL
Datasheet PDF Download
Other datasheets in the file :
RJH30H1DPP,RJH30H1DPP-M0,RJH30H1DPP-M0-T2