Part Number : GB6B60KD
Function :INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Manufacturer : International Rectifier
Pinout : 
Description
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Datasheet PDF Download
Other datasheets in the file : GB6B60KD, GS6B60KD, GSL6B60KD, IRGB6B60KD, IRGS6B60KD