GB6B60KD PDF Datasheet


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Description

This is IRGB6B60KD. PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. G E tsc > 10 s, TJ=150°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60KD D2Pak IRGS6B60KD Max. 600 13 7.0 26 26 13 7.0 26 ± 20 90 36 -55 to +150 TO-262 IRGSL6B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collect.