Part Number : 30J124
Function :Discrete IGBTs
Manufacturer : Toshiba
Pinout : 
Description
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
Datasheet PDF Download
Other datasheets in the file : GT60M303A