30F124, GT30F124 IGBT – 300V, 200A – Toshiba

Part Number : 30F124, GT30F124

30F124 IGBT

Manufacturer : Toshiba

Description

Parallel MOSFETs have been used for the drive circuitry of plasma display
panels (PDPs). Recently, however, IGBTs are commonly used in large
current applications due to their superior current conduction capability.

Plasma Displays

GT30F124 is Toshiba IGBT.

30F124, GT30F124 isn’t MOSFETs.

GT30F124 = Marking 30F124

30F124 datasheet, Toshiba igbt

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power
conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers,
plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area  (3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

IGBT GT30F124, 30F124 Pinouts
GT30F126 Pinouts

PDF Download : IGBT GT30F124, 30F124 Datasheet

 

GT30F124, 30F124 PDF – 300V IGBT

Part Number : 30F124, GT30F124

Manufacturer : Toshiba

30F124 Datasheet PDF / 30F124 Pinout

GT30F124 IGBT TO-220SIS 300V 30F124

Applications : Plasma display panels

IGBT: Insulated Gate Bipolar Transistor

 

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

30F124

30F124

The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.

Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

30F124 Datasheet

GT30F124 , Marking : 30F124
GT30F1244607571498.pdf( Datasheet Filetype PDF : 30F124 Toshiba IGBT )

 

Datasheet PDF