ZXMN3A02N8 PDF Datasheet
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Description
This is 30V N-CHANNEL ENHANCEMENT MODE MOSFET. ZXMN3A02N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025
ID = 9.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
SO8
APPLICATIONS
Disconnect switches Motor control
ORDERING INFORMATION
DEVICE ZXMN3A02N8TA ZXMN3A02N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMN
3A02 Top View
ISSUE 4 - JANUARY 2005 1
SEMICONDUCTORS
ZXMN3A02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =-10V; T A =25°C (b) V GS =-10V; T A =70°C (b) V GS =-10V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b).