WFD830 PDF Datasheet
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Description
This is Silicon N-Channel MOSFET. http:, , www.nDatasheet.com
D830 WF WFD
Silicon N-Channel MOSFET
Features
- 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V - Ultra-low Gate Charge(Typical 32nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv, dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.38 -55~150 300 W, ℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed.