W60N10 PDF Datasheet
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Description
This is STW60N10. STH60N10, FI STW60N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STH60N10 STH60N10FI STW60N10
s s s s s s s s
V DSS 100 V 100 V 100 V
R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω
ID 60 A 36 A 60 A
TO-247
TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 2 1
3 2
3 2
TO-218
1
ISOWATT218
1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STH, STW60N10 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drai.