W34NB20 PDF Datasheet
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Description
This is STW34NB20. N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH™ MOSFET
Table 1. General Features
Type
STW34NB20
Figure 1. Package
RDS(on) < 0.075 Ω ID 34 A
VDSS 200 V
STW34NB20
FEATURES SUMMARY - TYPICAL RDS(on) = 0.062 Ω
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EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
1 3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv, dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS - SWITCH MODE POWER SUPPLIES (SMPS)
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Figure 2. Internal Schematic Diagram
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING
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Table 2. Orde.