VNS3NV04D-E PDF Datasheet


Please enter the part number you wish to PDF download in the search bar.


scroll

Description

This is fully autoprotected Power MOSFET. VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance (per ch.) RON 120m Current limitation (typ) )Drain-Source clamp voltage ILIMH VCLAMP 3.5A 40V uct(s- Linear current limitation rod- Thermal shut down P- Short circuit protection te- Integrated clamp le- Low current drawn from input pin so- Diagnostic feedback through input pin b- Esd protection - O- Direct access to the gate of the power mosfet )(analog driving) roduct(s- Compatible with standard power mosfet SO-8 Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KH- applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the.