TMD1414-2C PDF Datasheet


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Description

This is MICROWAVE POWER MMIC AMPLIFIER. MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GH- to 14.5GH- n HIGH GAIN G1dB=26.0dB at 13.75GH- to 14.5GH- n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 10 -10 20 -40 ∼ +90 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency G IDD ηadd G1dB VDD=7V VGG=-5V dB dB A % 21.0 26.0 1.4 29 ±1.0 1.8 SYMBOL CONDITIONS UNIT GH- dBm MIN. 13.75 32.0 TYP. MAX. 34.5 14.5 f P1dB uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSH.