TIM1414-4LA PDF Datasheet
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Description
This is MICROWAVE POWER GaAs FET.
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=36.5dBm at 14.0GH- to 14.5GH- n HIGH GAIN G1dB=6.5dB at 14.0GH- to 14.5GHz
TIM1414-4LA PRELIMINARY
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 9V Power Gain at 1dB G1dB f= 14.0 to 14.5GH- Compression Point Drain Current IDS1 Gain Flatness G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25dBm (Single Carrier Level) UNIT dBm dB A dB % dBc A °C MIN. 36.0 6.0 -42 TYP. MAX. 36.5 6.5 1.7 23 -45 1.7 2.2 ±0.8 2.2 70
DataShe
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ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal.