TH50VSF3583AASB PDF Datasheet
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Description
This is (TH50VSF3582AASB / TH50VSF3583AASB) MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS. TH50VSF3582, 3583AASB
TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION
The TH50VSF3582, 3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read, Write operation so that data can be read during a Write or Erase operation. The TH50VSF3582, 3583AASB can range from 2.67 V to 3.3 V. The TH50VSF3582, 3583AASB is available in a 69-pin BGA package, making it suitable for a variety of design applications.
FEATURES
Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 A maximum (SRAM CMOS level) Standby: 10 A maximum (FLASH) Block erase architecture for flash memory 8 × 8 Kbytes 63 × .