T40N03G PDF Datasheet


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Description

This is Power MOSFET ( Transistor ). NTD40N03R Power MOSFET 45 A, 25 V, N Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High Efficiency DC DC Converters These are Pb Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Continuous Thermal Resistance Junction to Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp ≤ 10 ms) Thermal Resistance Junction to Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current Continuous @ TA = 25°C Thermal Resistance Junction to Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current Continuous @ TA = 25°C Operating and Storage Temperature Range VDSS VGS RPqDJC ID ID ID RqJA PD ID RqJA P.