STS7C4F30L PDF Datasheet

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Description

This is N-CHANNEL POWER MOSFET. STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET™ POWER MOSFET TYPE STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) s s s VDSS 30 V 30 V RDS(on) <0.022 Ω <0.080 Ω ID 7A 4A s TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.070 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC, DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM( ) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage.