STL26NM60N PDF Datasheet
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Description
This is N-channel Power MOSFET.
STL26NM60N
N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET
Features
Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1)
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"OTTOM VIEW
1. The value is rated according to Rthj-case - - -
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
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Applications
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Switching applications Figure 1. Internal schematic diagram
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
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Table 1.
Device summary
Marking 26NM60N Packa.