SPP11N60C3 PDF Datasheet
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Description
This is Cool MOS Power Transistor. SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv, dt rated
High peak current capability Improved transconductance
P-TO220-3-31
23 1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V 0.38 Ω 11 A
PG-TO220
Type
Package
SPP11N60C3
PG-TO220
SPI11N60C3
PG-TO262
SPA11N60C3 PG-TO220FP
SPA11N60C3E8185 PG-TO220
Ordering Code Q67040-S4395 Q67042-S4403 Q67040-S4408
Marking 11N60C3 11N60C3 11N60C3 11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static
Gate source voltage AC (f .