SI5915DC-T1 PDF Datasheet

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Description

This is Dual P-Channel 1.8-V (G-S) MOSFET. Si5915DC Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.070 @ VGS = --4.5 V --8 0.108 @ VGS = --2.5 V 0.162 @ VGS = --1.8 V FEATURES ID (A) --4.6 --3.7 --3.0 D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 APPLICATIONS D Load Switch or PA Switch for Portable Devices S1 S2 1206-8 ChipFETt 1 S1 D1 D1 D2 D2 G1 S2 G2 G1 G2 Marking Code DE XX Lot Traceability and Date Code Part # Code Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: Si5915DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs --8 Stea.