SI5441DC PDF Datasheet


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Description

This is P-Channel 2.5-V (G-S) MOSFET. Si5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = 4.5 V 20 0.06 @ VGS = 3.6 V 0.083 @ VGS = 2.5 V FEATURES ID (A) 5.3 5.1 4.3 11 Qg (Typ) D TrenchFETr Power MOSFET D 2.5-V Rated Pb-free Available 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BA XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441DC Si5441DC-T1 E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 "12 Unit V 5.3 3.8 20 2.1 2.5 1.3 55 to 150 260 3.9 2.8 1.1 1.3 0.7 W _C A TH.