SI4800 PDF Datasheet
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Description
This is N-channel TrenchMOS logic level FET. SI4800
N-channel TrenchMOS™ logic level FET
M3D315 Rev. 02 17 February 2004
Product data
1. Product pro le
1.1 Description
N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low gate charge s Low on-state resistance
s Surface mounted package s Fast switching.
1.3 Applications
s Portable appliances s Lithium-ion battery chargers
s Notebook computers s DC-to-DC converters.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 2.5 W
s ID ≤ 9 A s RDSon ≤ 18.5 mΩ
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8
Pinning - SOT96-1 (SO-8), simpli ed outline and symbol
Description
Simpli ed outline
source (s) gate (g)
85
drain (d)
1 Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
Philips Semiconductors
SI4800
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
SI4800
SO8
plastic small outline package; 8 leads
4. Limitin.