SGS5N150UF PDF Datasheet
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Description
This is General Description. SGS5N150UF
IGBT
SGS5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
Features
High Speed Switching Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
G
TO-220F
G C E
TC = 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1, 8” from Case for 5 Seconds
@ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 300
Units V V A A A W W °C °C °C
Notes : (1) Repetitive ra.