SGF5N150UF PDF Datasheet


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Description

This is General Description. SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. Features High Speed Switching Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-3PF G C E E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1, 8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGF5N150UF 1500 ± 20 10 5 20 62.5 25 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive r.