SGB02N120 PDF Datasheet

Please enter the part number you wish to PDF download in the search bar.

Description

This is Fast S-IGBT in NPT-technology. SGP02N120, Fast IGBT in NPT-technology 40lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB02N120 SGD02N120 C G E P-TO-252-3-1 (D-PAK) (TO-252AA) P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) Complete product spectrum and PSpice Models : http:, , www.infineon.com, igbt, Type SGP02N120 SGB02N120 SGD02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.