RU6099R PDF Datasheet
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Description
This is N-Channel Advanced Power MOSFET. RU6099R
N-Channel Advanced Power MOSFET
Features
60V, 120A, RDS (ON) =6mΩ (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv, dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available
Pin Description
TO-220
Applications
Switching Application Systems Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG IS Parameter Rating 60 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C PD RθJC
③ ①
Unit
Common Ratings (TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A
120 380
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current
② ①
120
Maximum Power Dissipation Thermal Resistance-Junction to Case
TC=25°C TC=100°C
90 150 75 1
①
W °C, W
Drain-Source Avalanche Ratings EAS Avalanche Energy, Sing.