RN2304 PDF Datasheet
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Description
This is TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process). RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2301,RN2302,RN2303 RN2304,RN2305,RN2306
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1301~1306 Unit: mm
Equivalent Circuit
Bias Resistor Values
Type No. RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2301~2306 RN2301~2306 RN2301~2304 RN2305, 2306 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 100 150 55~150
JEDEC EIAJ TOSHIBA Weight: 0.006g
― SC-70 2-2E1A
Unit V V V mA mW °C °C
1
2001-06-07
RN2301~RN2306
Electrical Characteristics (Ta = 25°C)
Characteristic Collector.