RJP63F3DPP-M0 PDF Datasheet
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Description
This is N-Channel IGBT. Preliminary Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1. Gate 2. Collector 3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VCES VGES IC ic(peak) Note1 PC Note2 θj-c Tj Tstg Ratings 630 ±30 40 200 30 4.17 150 55 to +150 Unit V V A A W °C, W °C °C
R07DS0321EJ0200 Rev.2.00 May 26, 2011
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