RJP30K3DPP-M0 PDF Datasheet
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Description
This is N-Channel Power MOSFET / Transistor. Preliminary Datasheet
RJP30K3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1. Gate 2. Collector 3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C Symbol VCES VGES IC ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 40 300 30 4.17 150 55 to +150 Unit V V A A W °C, W °C °C
R07DS0501EJ0100 Rev.1.00 Jul 05, 2011
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Datashee.