RJK0389DPA PDF Datasheet
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Description
This is Silicon N Channel Power MOS FET Power Switching.
RJK0389DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G1722-0300 Rev.3.00 Dec 03, 2008
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2)
2 3 4 D1 D1 D1
9 S1, D2
5 6 7 8
5 6 7 8
1 G1 8 G2
9
4 3 2 1
4 3 2 1
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source
S2 S2 S2 5 6 7
(Bottom View)
MOS1
MOS2 and Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg MOS1 30 ±20 15 60 15 8 6.4 10 150 55 to +150 MOS2 30 ±20 20 80 20 11 12.1 10 150 55 to +150 Unit V V A A A A mJ W °C
°C
Notes: 1. PW ≤ 10 s, duty cy.