RJH60F7ADPK PDF Datasheet


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Description

This is Silicon N Channel IGBT. RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features High speed switching Low on-state voltage Fast recovery diode Preliminary REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC θj-c θj-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 55 to +150 Unit V V A A A A W °C, W °C, W °C °C REJ03G1837-0100 Rev.1.00 Oct 13, 2009 P.