RF3826 PDF Datasheet
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Description
This is 9W GaN WIDEBAND. RF3826 30MH- to 2500MHz, 9W GaN Wideband Power Amplifier
RF3826
30MH- TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier , SO8
Features
VGS Pin 1
Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MH- to 2500MH- Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm Gain 12dB Power Added Efficiency 45% (30MH- to 2500MHz) Power Added Efficiency 50% (200MH- to 1800MHz) -40°C to 85°C Operating Temperature
RF IN Pin 2,3
RF OUT , VDS Pin 6,7
GND BASE
Functional Block Diagram
Product Description
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single .