RD70HVF1 PDF Datasheet
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Description
This is Silicon MOSFET Power Transistor. MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
DRAWING
25.0+, -0.3 7.0+, -0.5 11.0+, -0.3
1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically designed for VHF, UHF High power amplifiers applications.
OUTLINE
4-C2
FEATURES
High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MH- Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MH- High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band
24.0+, -0.6
2
10.0+, -0.3
9.6+, -0.3
3
R1.6+, -0.15
0.1 -0.01 4.5+, -0.7 6.2+, -0.7
+0.05
APPLICATION
For output stage of high power amplifiers in VHF, UHF Band mobile radio sets.
5.0+, -0.3
18.5+, -0.3
RD70HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
3.3+, -0.2
RoHS COMPLIANT
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VD.