RD2004LN PDF Datasheet
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Description
This is Ultrahigh-Speed Switching Diode. Ordering number : ENA1270A
RD2004LN
SANYO Semiconductors
DATA SHEET
RD2004LN
Features
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Sine wave, 10ms single pulse Conditions Ratings 400 400 20 180 150 --55 to +150 Unit V V A A °C °C
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=400V IF=10A, di , dt=100A, μs IF=0.5A, IR=1A Junction-Case : Smoothed .