PJ2N9012 PDF Datasheet
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Description
This is PNP Epitaxial Silicon Transistor.
PJ2N9012 PNP Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS B PUSH-PULL OPERATION
TO-92
SOT-23
High total power dissipation(PT=625mW) High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity
ABSOLUTE MAXIMUM RATINGS (Ta= 25 ℃ )
Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value -40 -20 -5 -500 625 150 -55 ~150 Uint V V V A W
0 0
P in : 1.Emitter 2.Base 3.Collector
P in : 1. Base 2. Emitter 3. Collector
ORDERING INFORMATION
C C
Device PJ2N9012CT PJ2N9012CX
Operating Temperature -20℃～+85℃
Package TO-92 SOT-23
ELECTRICAL CHARACTERISTICS (Ta= 25 0C)
Characte ristic
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base S.