PHPT610035NK PDF Datasheet
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Description
This is NPN/NPN high power double bipolar transistor. LFP AK 56
PHPT610035NK
14 October 2014
D
NPN, NPN high power double bipolar transistor
Product data sheet
1. General description
NPN, NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP, PNP complement: PHPT610035PK. NPN, PNP complement: PHPT610035NPK.
2. Features and benefits
Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified
3. Applications
Current mirror Motor control Power management Backlighting applications Relay replacement differential amplifiers
4. Quick reference data
Table 1. Symbol Per transistor VCEO IC Per transistor RCEsat collector-emitter saturation resistance IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 s; δ ≤ 0.02; Tamb .