PHPT60606NY PDF Datasheet
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Description
This is NPN high power bipolar transistor. PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
8 December 2014
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60606PY
2. Features and benefits
High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified.
3. Applications
Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement Motor drive
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter saturation resistance
IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 s; δ ≤ 0.02; Tamb = 25 °C
Min Typ Ma.