PDTC115EE PDF Datasheet

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Description

This is NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW. DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product speci cation Supersedes data of 2004 Apr 06 2004 Aug 06 Philips Semiconductors Product speci cation NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION PDTC115E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. 100 100 MAX. 50 20 UNIT V mA kΩ kΩ NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTC115EE PDTC115EEF PDTC115EK PDTC115EM PDTC115ES PDTC115ET PDTC115EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia.