P2904BD PDF Datasheet


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Description

This is N-Channel Logic Level Enhancement Mode Field Effect Transistor. NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 29mΩ ID 25A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 2 1 SYMBOL VDS VGS LIMITS 40 ±20 25 20 75 27 37 30 20 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH TC = 25 °C TC = 70 °C EAS PD Tj, Tstg mJ W °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJc RθJA TYPICAL MAXIMUM 4.1 40 UNITS °C , W °C , W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate.