P2103NVG PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is N- & P-Channel Enhancement Mode Field Effect Transistor. NIKO-SEM
N- & P-Channel Enhancement Mode
P2103NVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS RDS(ON)
N-Channel 30 21mΩ P-Channel -30 34mΩ
ID 8A -6A
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS, TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C TA = 70 °C
L = 0.1mH TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
8 -6
6 -5 A 36 -27
26 -27
35 38 mJ
2 W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 62.5
UNITS °C , W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-So.